Mos-Gated Thyristors Power Semiconductor Switches Term Paper

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The device is triggered on when the anode voltage becomes positive compared to the cathode and a positive gate bias is applied to establish a surface channel. This makes electrons flow into the N-drift region. Breaking the thyristor latch-up turns it off. [6]

Insulated Base MOS -- Controlled Thyristor (IBMCT)

The IBMCT structure is attuned to the Insulated Base MOS-Controlled Thyristor production process. This permits rapid hole removal from the p-body region. It is composed of a vertically placed thyristor with separate gates to control the device. It is activated by biasing the on-gate positively and grounding the off-gate. This generates an inversion channel. Its turn off process depends on the presence of a Floating Ohmic Contact (FOC). This is attained by redirecting the holes from the p-body region to FOC resulting in a union with electrons coming from the Cathode. The current capability of IBMCT is relatable to BRT. [7]

MOS gated Floating base thyristor

The Floating base thyristor (FBT) is aimed at reducing the on-state voltage drop while conduction and sufficient Forward Biased Safe Operating Area (FBSOA).

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There are two MOS gates (named on and OFF gate). The device exhibits low forward voltage drop when both have positive bias. It demonstrates IGBT traits on assigning negative bias to the OFF gate. FBT's are suited towards controlled turn on and off-based switching. [8]

Conclusion

In conclusion we can confirm the feasibility of power devices which utilize different arrangements of MOS and thyristor elements. Emitter Switched and Base Resistance Controlled Thyristor are devices which suit the requirements of applications which involve high speed power switching. The latter displays great on-state characteristics along with decent gate turn-off ability. The trade off property of a Dual Gate MOS gated thyristor is a lot improved than Insulated Gate Bipolar transistors. High current ruggedness in MOS gated thyristors can be attributed to a low forward drop and consistent turn-on. Ruggedness in turn off current is because of the flatness of its blocking function as compared to IGBT's. [9][10].....

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